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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3058A DESCRIPTION *With TO-3 package *High voltage ,high speed APPLICATIONS *For switching regulator and DC/DC converter applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 600 450 7 30 200 200 -65~200 UNIT V V V A W THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 1.0 UNIT /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=10mA ; IB=0 IC=1mA; IE=0 IE=1mA; IC=0 IC=20A; IB=4A IC=20A; IB=4A VCB=500V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=20A ; VCE=5V IC=4A ; VCE=10V IE=0 ; VCB=10V;f=1MHz 15 10 MIN 450 600 7 2SC3058A TYP. MAX UNIT V V V 1.0 1.5 100 100 50 40 30 420 V V A A MHz pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3058A Fig.2 Outline dimensions 3 |
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